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Date: 30-04-14

8.5 - 11.75 GHz GaAs MMIC power amplifier for 41dBm pulsed power

MACOM has unveiled its new X-band high power amplifiers for commercial radar and communication applications. The two-stage and three-stage MMIC Amplifiers offer a saturated pulsed output power of 41dBm and 40% power added efficiency. These MMIC amplifiers suggested as ideal for X-Band communication and radar applications.

Both power amplifiers can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications, suggests MACOM.

The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41dBm, a large signal gain of 21dB and 40% power added efficiency. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications.

The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41dBm and a small signal gain of 36dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip provides 40% power added efficiency and offers very high gain which eliminates the need for a driver amplifier in customers' circuits.

"The combination of high power, high gain and excellent power added efficiency performance, makes these two power amplifiers very attractive solutions for high power X-Band applications," said Paul Beasly, Product Manager. "Furthermore, the versatile biasing options and wide-band operation make the devices ideal for a wide range of X-band applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links."

Samples of both the MAAP-015030 and MAAP-015035 are available from stock.

To know more visit www.macom.com

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