Elpida samples stacked DDR3 SDRAM made by using TSV tech

Elpida Memory, Inc. is sampling stacked DDR3 SDRAM (x32-bit I/O configuration) made using TSV (Through Silicon Via) technology. The sample is a low-power 8-gigabit (1-gigabyte) DDR3 SDRAM assembled in a single package that consists of four 2-gigabit DDR3 SDRAMs fitted to a single interface chip using TSV.

TSV is three-dimensional stack packaging technology, which involves stacking together multiple chips vertically through electrical connections with metal-filled via holes in the SI die. Compared with the existing connection method of wire bonding multiple chips, TSV greatly reduces the length of wires in the semiconductor design to enable faster speeds, lower power consumption, smaller package size and other important chip function advantages.

Elpida claims 8-gigabit TSV DRAM devices when compared with systems that use SO-DIMM (Small-outline DIMM), operating power can be reduced by 20% and standby power by 50%, and the chip mounting area can be reduced by 70%, the chip height can be decreased and the DIMM socket can be eliminated.

Target applications:

Tablet PCs, extremely thin PCs and other mobile computing systems.

2-gigabyte SO-DIMM 8-gigabit (1-gigabyte) TSV x 2

Supply voltage (VDD) 1.5V/1.35V 1.5V/1.35V

Bust length 8/4 8/4

Bank 8 8

Cin Cin(mono) x 8 Cin(mono) x 2

Data rate (Mbps) 1600 (1.5V)
1066/1333 (1.35V) 1600 (1.5V)
1066/1333 (1.35V)

Operating (IDD1) 1.0 0.8 (proportional to SO-DIMM)

Standby (IDD2N) 1.0 0.5 (")

Refresh (IDD5) 1.0 0.5 (")

Mounting area 1.0 0.3 (")