|
Date: 16th Jun 2011
NXP's small-signal MOSFETs with low on-resistance
of 18 milli ohms
NXP Semiconductors N.V. has announced a new family of
small-signal MOSFETs offering low RDS (on) resistance. The
low RDS(on) P-Channel and N-Channel MOSFETs are suggested
for consumer electronics applications such as notebooks,
tablets, handsets, e-readers, set-top-boxes and LCD TVs
where the low on-resistance MOSFETs can save significant
energy loss. These MOSFETs are made available in high-volume
SOT23 and SOT457 packages with a compact 3-mm x 3-mm footprint.
Facts / Highlights:
The PMV16UN, one of the new N-Channel MOSFETs from NXP,
delivers an ultra-low RDS(on) value of (18 mOhm max @VGS
= 4.5 V) in SOT23.
NXP says its latest portfolio of small-signal MOSFETs offers
a 20-percent increase in power efficiency compared to previous
Trench MOSFET generation types.
Parts are available immediately for US $1.20 in units of
1,000.
A total of 70 types of small-signal MOSFETs will be released
in 2011.
"Our new small-signal MOSFETs have set new benchmarks
in low on-state resistance in SOT23, enabling higher efficiency
in much smaller form factors in an increasingly competitive
consumer electronics market," said Jens Schnepel, product
marketing manager, transistors, NXP Semiconductors.
|
