Date: 7th Jun 2011
NXP's new GaN process technology supports
towards a "universal transmitter"
NXP Semiconductors N.V. is showcasing a live demo of its
devices made using Gallium Nitride (GaN) technology at IMS2011
this week. The GaN demo includes a 50-W wideband amplifier,
the CLF1G0530-50, covering 500 to 3000 MHz; 2.1-GHz and
2.7-GHz Doherty power amplifiers for base stations; and
a 100-W amplifier, the CLF1G2535-100, covering 2.5 - 3.5
GHz. NXP has developed its high-frequency, high-power GaN
process technology in collaboration with United Monolithic
Semiconductors and the Fraunhofer Institute for Applied
Solid State Physics. Engineering samples of NXP's GaN power
amplifiers are available immediately.
Facts / Highlights
NXP's GaN devices are manufactured on SiC substrates for
enhanced RF and thermal performance.
Target end-user applications for NXP's GaN include cellular
communications, wideband amplifiers, ISM, PMR, radar, avionics,
RF lighting, medical, CATV and digital transmitters for
cellular and broadcast.
With its high power densities, GaN has the potential to
expand into applications such as high power broadcast applications,
where solid-state power amplifiers built with vacuum tubes
are still the norm.
NXP's GaN process technology supports towards a "universal
transmitter", where this device can be used in multiple
systems and to generate different frequencies resulting
in enhancing of base station's coverage area.
NXP's GaN broadband power amplifiers are expected to be
available for volume production at the end of 2011.
"As GaN continues to gain traction, the entry of major
semiconductor companies such as NXP helps to validate GaN
as a 'technology of choice' for RF power semiconductors,
and will help to accelerate broader adoption," said
ABI Research director Lance Wilson.
"We were overwhelmed by the extraordinarily positive
response to our GaN roadmap presentation at CS Europe earlier
this year, from customers and partners, as well as other
semiconductor companies - in large part due to the economies
of scale we're able to bring to the equation. As we release
new products based on GaN, we'll also be working with our
partners to build a European supply chain that optimizes
costs at every step in the value chain, and continue to
offer our customers choice when it comes to selecting the
best alternatives - LDMOS or GaN - for high-efficiency applications,"
John Croteau, senior vice president and general manager,
high performance RF, NXP Semiconductors.
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