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Date: 6th Feb 2011

850 nm infrared emitter featuring a parabolic lens

Vishay Intertechnology, Inc. has released a new 850 nm infrared emitter featuring a parabolic lens for a very narrow ± 3° angle of half intensity. Based on a unique surface emitter chip technology, the VSLY5850 offers high radiant intensity of 600 mW/sr at a 100 mA drive current, high optical power to 55 mW, and fast 10 ns switching times.

The surface emitter technology used in the VSLY5850 represents a unique die construction in which all the light generated inside the semiconductor is emitted through the top surface of the chip reducing side emissions out of the device's 5 mm plastic package, providing the user with a narrow, well-directed emission beam without disturbing fractions towards the sides.

The emitter's extraordinarily high radiant intensity allows significant intensities to be achieved at low drive currents, reducing power consumption by up to 3x when compared to the next available intensity class of infrared emitters, and extending operating life in battery driven infrared applications.

The VSLY5850 is optimized for IR illumination in CMOS cameras, fire alarm systems, and smoke detectors. The emitter's fast switching times also make it ideal for use in high modulation frequency applications for long-range data transmission in road cash systems, traffic controls, and license plate flashing. The device's high optical power allows designers to reduce component count and/or improve performance in these applications.

The new emitter offers an operating temperature from - 40 °C to + 85 °C and is suitable for high pulse current operation. The VSLY5850 is compliant to RoHS directive 2002/95/EC and WEEE 2002/96/EC, and halogen-free according to the IEC 61249-2-21 definition

Samples and production quantities of the new VSLY5850 emitter are available now, with lead times of 8 to 10 weeks for larger orders.


 
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