Date:20th May 2012

Semiconductor tech: Samsung researchers develop Graphene-Silicon Schottky switch

The Journal Science has published a paper with title "Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier" written by researchers at Graphene Research Center, Samsung Advanced Institute of Technology.

As per the abstract Samsung researchers were able to reduce the conduction current in Graphene by 10 to the power of 5 times. Graphene though a material with semiconductor properties, but unlike silicon, which is more of a semi-insulator rather than a semiconductor, it's challenging to bring the current flow in Graphene to near-zero or very low level.

Samsung researchers have made a three-terminal active device (transistor) with graphene-silicon schottky barrier. Researcher has demonstrated inverter and half-adder logic circuits by fabricating Graphene Barristor on respective 150-mm wafers and combining complementary p- and n-type GBs.

To know more on this visit http://www.sciencemag.org/content/early/2012/05/16/science.1220527

Author: Srinivasa Reddy N