HBM forecast by Yole: To reach US$14 billion by 2024 at CAGR of 38% through 2029

The High-Bandwidth Memory (HBM) semiconductor market is set for a substantial growth, with latest Yole Group forecasting revenues to reach US$14 billion by 2024 and an impressive CAGR of approximately 38% through 2029. As demand for high-speed memory technologies surges, particularly fueled by AI computing demands, the HBM market emerges as a frontrunner, expected to outpace the overall DRAM market significantly. Yole Group's comprehensive analysis and projections shed light on the evolving landscape of DRAM technologies, emphasizing the pivotal role of advancements like hybrid bonding and monolithic 3D DRAM in shaping the future of memory solutions. With the promise of enhanced performance, efficiency, and scalability, the trajectory of HBM and 3D DRAM heralds a new era of innovation and opportunity in the semiconductor industry. The shift towards 3D technologies, such as 4F2 cell designs and hybrid bonding, alongside advancements like monolithic 3D DRAM, promises to revolutionize DRAM scaling and unlock new opportunities, particularly in China. Amidst a memory market winter, the demand for DRAM remained subdued, except for niche segments like AI servers and automotive electronics, driven by applications like ChatGPT that demand high-speed memory technologies. Hybrid bonding emerges as a critical enabler for advancing HBM, enhancing memory bandwidth and power efficie...