ROHM and Toshiba complementally utilize each other's power semiconductor production capacity
Date: 12/12/2023
Two Japanese power semiconductor leader ROHM and Toshiba are collaborating in power semiconductor manufacturing with the support of Japanese Government. Toshiba release stated both respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party’s production capacity. ROHM and Toshiba have been considering collaboration in the power device business for some time, and that resulted in the joint application.
Due to growth in electric vehicles market and new energy applications, there is a significant growth of power semiconductor devices. There is a requirement to ensure stable and secure supply of these devices for regional economy to grow and to address the global market.
Toshiba is a global leader in Si power devices serving automotive and industrial markets. Toshiba started production on a 300mm wafer line in year 2022 , and is investing hugely to enhance production capacity and meet strong demand growth.
SiC power devices are more used for their energy-effecieny and other advantages. ROHM is leading maker of SiC devices and its latest 4th Generation SiC MOSFETs are will be adopted for numerous electric vehicles and industrial equipment. ROHM is investing hugely into SiC production capacity.
"ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices, respectively, toward enhancing both companies’ international competitiveness. The companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan. " stated in the release by Toshiba.
Source: Toshiba
