TI breaks ground on new 300-mm semiconductor wafer fab in Utah, US
Date: 07/11/2023
Precision analog and mixed signal semiconductor leader Texas Instruments (TI) broke ground on its new 300-mm semiconductor wafer fab called LFAB2 in Lehi, Utah. LFAB2 to create approximately 800 additional TI jobs as well as thousands of indirect jobs, with first production available as early as 2026. The new LFAB2 connect to the TI’s existing 300-mm wafer fab in Lehi.
"Today we take an important step in our company’s journey to expand our manufacturing footprint in Utah. This new fab is part of our long-term, 300-mm manufacturing roadmap to build the capacity our customers will need for decades to come," said TI' Chief Executive Officer Haviv Ilan. "At TI, our passion is to create a better world by making electronics more affordable through semiconductors. We are proud to be a growing member of the Utah community, and to manufacture analog and embedded processing semiconductors that are vital for nearly every type of electronic system today."
"TI’s growing manufacturing presence in Utah will be transformative for our state, creating hundreds of good-paying jobs for Utahns to manufacture critically important technology," said Utah Governor Spencer Cox. "We are proud that semiconductors – made in Utah by Utahns – will power the innovation that is foundational to our country’s economic and national security."
LFAB2 to use100% renewable electricity, and installed with advanced 300-mm equipment and processes to reduce waste, water and energy consumption. LFAB2 to recycle water at nearly twice the rate of TI’s existing fab in Lehi.
TI said "LFAB2 will complement TI’s existing 300-mm wafer fabs, which include LFAB1 (Lehi, Utah), DMOS6 (Dallas), and RFAB1 and RFAB2 (both in Richardson, Texas). TI is also building four new 300-mm wafer fabs in Sherman, Texas (SM1, SM2, SM3 and SM4), with production from the first fab as early as 2025."
