RF GaN market is expected to exceed US$2 billion by 2028
Date: 04/07/2023
In its latest findings Yole said the RF GaN-on-SiC is experiencing a resurgence in momentum due to the installation of 5G base stations. Simultaneously, a significant acquisition has taken place in the dynamic GaN-on-Si field.
Further details shared by Yole:
The RF GaN market is expected to exceed US$2 billion by 2028, mainly driven by 5G telecom infrastructure.
The GaN-on-SiC RF devices is expected to be adopted compared to silicon LDMOS for the telecom infrastructure market, mainly driven by investment in India in H2-2023 and 2024.
Meanwhile, GaN-on-Si technology is still being investigated and developed by the ecosystem, mainly driven by the leading players like Infineon Technologies, MACOM, and STMicroelectronics, as well as foundries such as Global Foundries, UMC, and many others.
RF GaN has long been favored for its exceptional performance in the power amplifier stage of 4G base stations. Meanwhile, defense applications consistently stretch the demand for RF GaN-on-SiC in military radar and electronic warfare systems. However, the landscape for RF GaN underwent a period of adjustment in 2021 due to factors such as the US ban on Huawei, the impact of Covid, and the slowdown in base station deployment.Nevertheless, as of 2023, the resurgence of 5G deployment has led to various manufacturers accelerating the adoption of GaN in their systems. GaN-on-Si technology has also made significant progress, as evidenced by the formation of partnerships and the announcement of prototypes. These developments will have a direct impact on the industry moving forward from 2023.
