1nm semiconductor chips: Research references points 1nm GAA FETs is achievable

When the channel width of the FinFET goes below 3 nm, the present metal gate structure fail to reliably control the flow of electrons in the channel. To achieve efficient switching you need the metal gate all around, that leads to gate all around FETs (GAA FETs). Then the channel takes the shape of wire or a sheet. Another challenge in 1nm is availability of less number free electrons and holes in pure silicon-channel, irrespective of it is strained or not. In an extraordinary human effort to control electron movement in semiconductor structure with few tens of atoms in hundred percent reliable manner, both switching on and switching off is extremely challenging. Researchers in their quest to increase the density of transistors, they are finding Silicon alternates such as Germanium and other compound semiconductor materials offering higher free -charge density. Silicon Germanium (Si-Ge) nano sheets are very effectively used as channel material in many of latest commercially successful and under-development research. The challenge here is to manufacture such devices in mass volumes with no or least variance from chip to chip.
To achieve atomic level building of 1 nm transistor switching elements, the semiconductor engineering researchers are using epitaxial deposition and atomic layer ...