Germanium Tin alloy as channel material for <2nm CMOS
Multiple research agencies are working on new channel material to replace silicon in deep nodes so that Moore's Law can work upto 1nm. Germanium-Tin alloy is been tested and found to be one of the choice of material by team of researchers and scientists from CEA Leti, France; ForschungsZentrum Jülich, Germany; the University of Leeds, United Kingdom; IHP- Innovations for High Performance Microelectronics, Frankfurt (Oder), Germany, and RWTH Aachen University, Germany.
This team could fabricate new type of transistor from a germanium-tin alloy. They have demonstrated electrons and other charge carriers can move faster in Germanium-Tin than in Silicon or Germanium, enabling lower operation voltages and smaller footprints in vertical than in planar devices. These are compatible with exising CMOS process, making them an option for low-power, high-performance chips and possibly quantum computers.
Mobility of electrons in Germanium–Tin transistors is 2.5 times higher than a comparable transistor made of pure Germanium. Germanium and Tin come from the same periodic table group as Silicon, these transistors could be integrated directly into conventional silicon chips with existing production lines, said CEA Leti in its release. A recently published paper in Nature Communications Engineering, Vertic...
Mobility of electrons in Germanium–Tin transistors is 2.5 times higher than a comparable transistor made of pure Germanium. Germanium and Tin come from the same periodic table group as Silicon, these transistors could be integrated directly into conventional silicon chips with existing production lines, said CEA Leti in its release. A recently published paper in Nature Communications Engineering, Vertic...
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