World's first 3nm GAA chips baked as Korea's "Semiconductor Superpower Strategy"

In this year of 2022, Samsung is first company to make 3 nm semiconductor chips ahead of TSMC. In this race of making densest chips, Samsung was left behind TSMC in 5 nm node race. However in this lap of the 3 nm race, Samsung leads the race by announcing first shipment of3 nm chips from its V1 line in Hwaseong. 3nm GAA process made chips deliver 45% power saving , 23% improvement in performance, and 16% saving in space compared to its 5nm process. Samsung is also into development of 2nd gen 3nm process, offering power consumption reduction by up to 50%, improve performance by 30% and reduce area by 35% compared to its 5 nm chips. Samsung celebrated this first shipment by holding a commemorative ceremony with participation of ministers from South Korean government, Samsung's semiconductor technology partners and its fabless customers. Samsung has made the 3nm chips by using gate all around (GAA) technology and used nanosheets instead of nanowires. Samsung’s GAA Multi-Bridge-Channel FET (MBCFET) tech clears some of the hurdles faced using FinFET, where they enable IC chips to operate at lesser supply voltage levels and increase performance performance by rising drive current capability. Samsung Electronics CEO and DS Division Director Kyehyun Kyung said “3nm GAA mass production is a landmark achievement for our foundry business: our early success in GAA technology...