STT and TEL collaborating on "SRAM and DRAM replacing MRAM"

Japan-based semiconductor equipment vendor Tokyo Electron (TEL) and the MRAM memory technologyy expert Spin Transfer Technologies (STT) have agreed to collaborate on next-generation SRAM and DRAM-class ST-MRAM devices. They are jointly putting effort to increase the speed, density, and endurance of MRAM memory devices. TEL's MRAM specific advanced physical vapour deposition (PVD) tool and STT's ST-MRAM technology are combined to quickly develop processes for the highest density and endurance devices. STT contributing its high-speed, high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, and TEL utilizing its industry-leading ST-MRAM deposition tool and knowledge of unique formation capabilities of magnetic films. Initially they will target embedded SRAM, and eventually stand-alone DRAM markets. ST-MRAM is expected to be more compact less costly and also operates with less power for storing data and is nonvolatile, retaining data for long periods without power. The weak points of MRAM such as slow switching and endurance issues are now addressed by this joint collaboration so that MRAM matches in performance with SRAM. STT and TEL will demonstrate solutions that are far denser than other ST-MRAM solutions while eliminating barriers to replacing SRAM. These sub-30nm Pmtj's, 40 to 50 percent smaller than other commercial ...