Globalfoundries is collaborating with Verisilicon in offering IOT chips using 22 nm FDSOI
By leveraging FDSOI technology, Globalfoundries is collaborating with Verisilicon in offering IOT chips integrating processor/digital circuitry, power, and RF in single chip. The advantage of FDSOI is it's a better process for RF and analog compared to finFET and other non SOI processes.
An IOT chip integrated with complete cellular modem, power management, and any other RF such as narrowband IOT and LTE -M is under development through this collaboration. The chip designs are planned to be fabricated using Globalfoundries 22FDX process, which the Globalfoundries claims as cost-effective for single chip IOT solutions. The chipmakers who are using 40 nm technology can have up to 80% improvement both in power and die size, according to Globalfoundries.
VeriSilicon has developed FD-SOI VLSI IPs and achieved first silicon success of many chips based on FD-SOI technologies . "integrated RF, body bias, and embedded memory, such as MRAM, are the key benefits of FD-SOI technologies beyond 28 nm bulk CMOS.” said Wayne Dai, VeriSilicon Chairman, President and CEO. “Integrated with RF and PA on GF 22FDX, the baseband and protocol stack are being implemented on our energy efficient and programmable ZSPnano that is optimized for control and data flow with powerful low latency, single cycle instructions for signal processing. GF’s new 300 mm fab for FDX in Chengdu and IP platforms such as this single chip solution for integrated NB-IoT and LTE-M, will have significant impact on China IoT and AIoT (AI of Things) industries.”
The samples chips are expected to be taped out in the fourth quarter of 2017.