40nm Resistive RAM from 4DS on par with 3D Flash memory

Flash memory vendors are trying hard make flash memory chips further denser, while other disruptive nonvolatile memory technologies are fast emerging. Some of the start-ups in the areas such as resistive random access memory (ReRAM) are continuously pushing the boundary of performance so that they can take over solid state memory space from flash. What is really driving the solid-state memory market is the need for huge memory storage both for personal as well as enterprise usage. Most of the market estimations point that the amount of data created replicated and consumed to reach 50 ZB ( zetta bytes) in 2020. Flash memory alone cannot serve this big market. The further integration going much in the vertical line (y-axis) and very less in the x-axis. The multi-storey flash memory is the future as of now, at least for some years. The leading flash memory vendors such as Samsung, LG, Micron, and Toshiba all have invested huge amount in 3-D Flash memory fabrication. They are not only integrating flash memory alone in the cube, they are also integrating the DRAM with Flash memory to make a single device for Solid-state memory. To go further advance, semiconductor vendors are also trying to pack SOC, DRAM and flash memory in one single device one stacked over the other. This trend is clicking well in the market, where the 3-D semiconductor packing all the logic and memory ...