Nano imprint lithography to make memory and flash chips at deeper nodes

Date: 06/02/2015
Toshiba and SK hynix to jointly work on development of basic technologies for Nano Imprint Lithography (NIL), suggested as alternative technology to photolithography used in semiconductor device manufacturing. NIL technology will be more significant in manufacturing memory chips using advanced nodes deeper than 10 nm.

Toshiba said it will focus on developing NIL and extreme ultraviolet lithography, which is required to make memory devices denser than the present ones.

The engineers from both the companies to work at the Toshiba’s Yokohama Complex in Yokohama, Japan in April this year and they are aiming to make this technology for practical use by 2017.

Nano imprint lithography doesn't require laser and photosensitive mask to etch circuits on a light-sensitive coating on semiconductor wafers, instead it transfers the circuit design directly, by impressing a patterned template onto the semiconductor wafer. This has the potential to achieve finer designs, according to Toshiba.

Author: Srinivasa Reddy N
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