3D CNT logic and RRAM memory device to outperform today's silicon chips

The researchers at Stanford University in US have developed a 3-D cube rather a chip integrating complex logic functions and nonvolatile high density memory with integration levels comparable to today's most advanced silicon VLSI semiconductor chip fabrication. The new device also cost less to produce and it consume far lesser power than silicon CMOS chip. It is a culmination of achievements, what researchers at Stanford University have done in the past 1 to 2 years in non-silicon logic and memory device research area. The three basic achievements include development of high-density nonvolatile memory RRAM using a better and simpler process than the present flash memory manufacturing. The second achievement is designing a logic chip using carbon nano tubes. Stanford researchers have developed logic chips using carbon nano tubes in 2013, but they were not that dense compared to today's silicon chips, recently they seem to have achieved higher level of integration comparable to today's silicon chips. The third important achievement is stacking of logic and memory devices one above the other in a far more simpler process compared to today's silicon semiconductor chip stacking using through silicon via (TSV). They have combined all these three achievements to build a three-dimensional integrated-circuit multi-storey device with computing and storage potential comparable to...