New ion implant tool from Applied for finFET and 3-D IC fab

To help semiconductor IC makers to increase the production yield at deeper nodes such as 14 nm and 16nm and address yield issues such as variability and device performance, Applied Materials has made available a new ion implant semiconductor manufacturing equipment called Varian VIISta 900 3D system medium-current ion implantation tool. This tool supports both FinFET and three-dimensional NAND Flash memory chip fabrication at deep nodes. Ion implant technology is used to dope and deposit on silicon and other semiconductor material. FinFET and 3D NAND flash requires more deposit and etch process along with lithography steps. These days ion implant equipments are increasingly used for fabricating >2x node silicon devices. Ion beam not only alter the chemical, electric or optic properties of the hit material but can also be more effectively used for physical changing too. The VIISta 900 3D system is improved in offering better beam angle precision, beam shape accuracy and higher dose and uniformity control, according to Applied. This equipment is designed to perform at same level of precision during process repeats. This system uses unique hot implant technology and triple magnet architecture for higher yield. Gary Rosen, vice president and general manager of Applied's Varian Semiconductor Equipment business unit said: VIISta 900 3D ion implantation tool provides ...