Supercomputer-advancement by Fujitsu for simulating transistor for Ultra LSI chips

When the semiconductor IC fabrication technology soon reaches less than sub 10nm levels from the present 14nm, the atomic behavior of semiconductor material gains more importance. The complex behavior of Ultra LSI (no more VLSI!) chip can not be understood by studying electrical properties based on the unit of physical dimension of the material, and general characterstics of the material. The new set of parameters based on atomic properties play a role to understand the electrical properties of silicon and many other compound semiconductor as well as other innovative semiconductor materials such as graphene and organic materials at scales even at 14nm and below. Some of the EDA vendors have already started designing chip design software by considering atomic behavior of the material. Synopsys supports VLSI designer to develop the transistor with TCAD modeling, that simulates the basis transistor at atomic level. While that is at the design-software application, there is also innovation going in utilizing supercomputers for designing the nano-switch by studing atomic behavior of the material. Fujitsu has shared its latest development in this technology. Fujitsu Laboratories said it has successfully simulated the electrical properties of a 3,000-atom nano device, which Fujitsu claims a threefold increase over previous efforts using a supercomputer. In nanotech devices...