Adesto presents a paper at IEDM on its NV memory withstanding 200 Deg C

Adesto Technologies has presented a paper on high temperature withstanding of its proprietary resistive random-access memory technology known as Conductive bridging RAM (CBRAM) at the IEEE organised 2013 International Electron Devices Meeting in Washington, D.C. on Wednesday, December 11, 2013. Adesto claims its CBRAM Technology is the lowest power, lowest cost non-volatile memory for mainstream and embedded applications. CBRAM non-volatile memory is created by applying patented metallization and dielectric stack layers between CMOS interconnect layers. Nonvolatile memory such as CBRAM, withstanding high-temperature is required in case of applications such as automotive and industrial, where harsh weather conditions are normal. The paper presented by a Adesto examines the challenges of high-temperature on non-volatile resistive memories. CBRAM can be manufactured using standard CMOS processes. Chip vendors can produce, a discrete CBRAM chip or embed it in a microcontroller or SOC ICs. The paper by Adesto presented the ability of non-volatile CBRAM memory cells to preserve stored data at 200°C for more than 800 hours. "The immunity of CBRAM memory cells to extremely high temperatures is a critical next-step in the commercialization of CBRAM technology," said Ishai Naveh, VP of Marketing at Adesto. “This capability opens the door to new applications for both our d...