Reliable and safe GaN devices launched by Navitas for Data Center, Solar, EV
Taiwan based GaN power-semiconductor company Navitas Semiconductor has launched the new optimized 4th-generation gallium nitride technology for demanding, high-power applications in data centers, solar / energy storage and EV markets, where efficiency, power density and robust & reliable operation are critical. The new 4th-generation GaN called GaNSafe power ICs are manufactured in Hsinchu, by its long-term partner TSMC.
GaNSafe platform featured with additional, application-specific protection functions and new, high-power packaging to deliver enabling performance under high-temperature, long-duration conditions. The initial, high-power 650/800 V GaNSafe portfolio covers a range of RDS(ON) from 35 to 98 Mω in a novel, robust, and cool-running surface-mount TOLL package, to address applications from 1,000 to 22,000 W. GaNSafe integrated features and functions include: Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density. High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions. Electrostatic discharge (ESD) protection of 2 Kv, compared to zero for discrete GaN transistors. ...
GaNSafe platform featured with additional, application-specific protection functions and new, high-power packaging to deliver enabling performance under high-temperature, long-duration conditions. The initial, high-power 650/800 V GaNSafe portfolio covers a range of RDS(ON) from 35 to 98 Mω in a novel, robust, and cool-running surface-mount TOLL package, to address applications from 1,000 to 22,000 W. GaNSafe integrated features and functions include: Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density. High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions. Electrostatic discharge (ESD) protection of 2 Kv, compared to zero for discrete GaN transistors. ...
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