Reliable and safe GaN devices launched by Navitas for Data Center, Solar, EV
Date: 08/09/2023
Taiwan based GaN power-semiconductor company Navitas Semiconductor has launched the new optimized 4th-generation gallium nitride technology for demanding, high-power applications in data centers, solar / energy storage and EV markets, where efficiency, power density and robust & reliable operation are critical. The new 4th-generation GaN called GaNSafe power ICs are manufactured in Hsinchu, by its long-term partner TSMC.
GaNSafe platform featured with additional, application-specific protection functions and new, high-power packaging to deliver enabling performance under high-temperature, long-duration conditions.
The initial, high-power 650/800 V GaNSafe portfolio covers a range of RDS(ON) from 35 to 98 M? in a novel, robust, and cool-running surface-mount TOLL package, to address applications from 1,000 to 22,000 W. GaNSafe integrated features and functions include:
Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions.
Electrostatic discharge (ESD) protection of 2 Kv, compared to zero for discrete GaN transistors.
650 V continuous, and 800 V transient voltage capability to aid survival during extraordinary application conditions.
Easy-to-use, complete, high-power, high-reliability, high-performance power IC with only 4 pins, to accelerate customer designs.
Programmable turn-on and turn-off speeds (Dv/dt) to simplify EMI regulatory requirements.
Compared to discrete GaN transistor designs, which can result in voltage spikes, undershoot, and specification violations, GaNSafe offers a solution that is effective, predictable, and reliable. In contrast to multi-chip modules, which need three times as many connections and have subpar cooling capacity, GaNSafe's durable 4-pin TOLL package has met the demanding IPC-9701 mechanical reliability requirement. It also provides simple, strong, and reliable performance.
With fully-tested hardware, embedded software, schematics, a bill of materials, layout, simulation, and hardware test results, Navitas offers comprehensive design collateral.
Examples of system platforms enabled by GaNSafe technology include:
Navitas’ CRPS185 data center power platform, that delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark.
Navitas’ 6.6 Kw 3-in-1 bi-directional EV on-board charger (OBC) with 3 Kw DC-DC. This 96%+ efficient unit has over 50% higher power density, and with efficiency over 95%, delivers up to 16% energy savings as compared to competing solutions.
“Our original GaNFast and GaNSense technologies have set the industry standard for mobile charging, establishing the first market with high-volume, mainstream GaN adoption to displace silicon,” said Gene Sheridan, CEO and co-founder. “GaNSafe takes our technology to the next level, as the most protected, reliable and safe GaN devices in the industry, and now also targeting 1-22 Kw power systems in AI-based data centers, EV, solar and energy storage systems. Customers can now achieve the full potential of GaN in these multi-billion dollar markets demanding the highest efficiency, density and reliability.”
Navitas claimed "40 customer projects are already in progress with GaNSafe in data center, solar, energy storage and EV applications, contributing to Navitas’ $1 billion customer pipeline."
The GaNSafe portfolio is available immediately to qualified customers with mass production expected to begin in Q4 2023.
