32Gb DDR5 DRAM for AI server and data center systems
Date: 05/09/2023
The world's number one semiconductor memory vendor Samsung has announced the development of world's highest capacity 32Gb DDR5 DRAM targeting applications such as AI capable high-performance computing data centres. This development follows after Samsung started volume production of its 12nm-class 16Gb DDR5 DRAM in May 2023.
“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”
Samsung also shared another achievement, where it produces this new 12nm memory chip -based 128GB modules without using the through silicon via (TSV) process and at reduced power consumption by approximately 10% compared to 128GB modules with 16Gb DRAM.
Samsung said with this 12nm-class 32Gb DDR5 DRAM as a foundation, Samsung plans to continue expanding its lineup of high-capacity DRAM to meet the current and future demands of the computing and IT industry. Samsung will reaffirm its leadership in the next-generation DRAM market by supplying the 12-nm-class 32Gb DRAM to data centers as well as to customers that require applications like AI and next-generation computing. The product will also play an important role in Samsung’s continued collaboration with other key industry players.
Mass production of the new 12nm-class 32Gb DDR5 DRAM is scheduled to begin by the end of this year.
