SiC MOSFETS with Kelvin connection terminal for the gate drive
Date: 05/09/2023
Toshiba started volume shippment of some of the versions of its new 4 pin SiC MOSFET series called TWxxxZxxxC in a TO-247-4L(X) package for industrial equipment with 650V ratings and with 1200V.
The fourth pin TO-247-4L(X) package allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.
A reference design for a Three-phase inverter using SiC MOSFETs is made available online at:
https://toshiba.semicon-storage.com/ap-en/semiconductor/design-development/referencedesign/detail.RD220.html
Three-phase inverter using the new SiC MOSFETs
Simple Block Diagram
Applications:
Switching power supplies (servers, data centers, communications equipment, etc.)
EV charging stations
Photovoltaic inverters
Uninterruptible power supplies (UPS)
Features:
Four-pins TO-247-4L(X) package:
Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
3rd generation SiC MOSFETs
Low drain-source On-resistance x gate-drain charge
Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)
Main Specifications:
For more details, visit:
https://toshiba.semicon-storage.com/ap-en/semiconductor/product/mosfets.html
