Gull-wing 40V auto-grade power MOSFETs withstands heat and take less space
Date: 21/08/2023
200A drain current rated S-TOGL (Small Transistor Outline Gull-wing Leads) packaged new 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB" from Toshiba deliver a significant On-resistance reduction of 11% against Toshiba's TO-220SM (W) package product by using U-MOS IX-H process and feature the same thermal resistance characteristics. Both the devices are suitable for automotive equipments such as inverters, semiconductor relays, load switches, motor drives featuring Safety-critical applications like autonomous driving systems reducing the size of automotive equipment, and contributes to high heat dissipation.
7.0mm×8.44mm footprint devices cuts the required mounting area by approximately 55% against the TO-220SM(W) package. They also feature 200A drain current rating which is higher than Toshiba’s similarly sized DPAK + package (6.5mm×9.5mm).
Toshiba said "Since automotive equipment is used in extreme temperature environments, the reliability of surface mounting solder joints is a critical consideration. The S-TOGL package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint."
Toshiba supports grouping shipment for the new products, in which the gate threshold voltage is used for grouping, where multiple devices can be connected in parallel for higher-current operation. This allows designs using product groups with small characteristic variation.
Brief specs:
Large drain current rating:
XPJR6604PB: ID=200A
XPJ1R004PB: ID=160A
AEC-Q101 qualified
IATF 16949/PPAP available[4]
Low On-resistance:
XPJR6604PB: RDS(ON)=0.53m? (typ.) (VGS=10V)
XPJ1R004PB: RDS(ON)=0.8m? (typ.) (VGS=10V)
For detailed specs visit:
https://toshiba.semicon-storage.com/ap-en/semiconductor/product/mosfets/automotive-mosfets.html
