Applied's new deposition, CMP, CVD, PVD, and PECVD semiconductor equipments for 3D chips

Applied Materials introduced below new semiconductor manufacturing gear for advanced 2.5 and 3 dimensional semiconductor packages. 1. The Insepra SiCN deposition system to deposit new silicon carbon nitride (SiCN) material for achieving higher dielectric bonding strength enabling structural stability and increase copper-to-copper interconnect density in the chip. 2. The Catalyst CMP solution with feature to better control the amount of “dishing,” the intentional recessing of copper material on two surfaces that will be bonded in a subsequent high-temperature annealing step. CMP dishing can create unwanted metal loss at the top surfaces of the copper pads, which can cause air gaps that decrease the fidelity and strength of the copper-to-copper bonds. Applied’s Catalyst solution is a dynamic temperature control technique that reduces dishing and increases throughput. 3. A new CVD process supporting Producer InVia 2 CVD System allows to make dielectric liners uniform and electrically robust at the extreme aspect ratios needed by logic and memory customers in a growing variety of TSV applications. The InVia 2 system uses a propriety in-situ deposition process which enables excellent conformality for high-aspect-ratio TSVs. The system also offers higher throughput than ALD technologies, thereby reducing the per-wafer cost of TSV to help further expand its adoption. 4....