1700V, 600 Ampere full-SiC semiconductor module for industrial power inverters and converters
Date: 16/06/2023
The wave of newly launched Silicon carbide (SiC) based power semiconductor modules are swiftly knocking out older MOSFET and IGBT power semiconductor switching modules from all kinds of power supplies in industrial, automotive and also in consumer electronics areas.
This significant power efficiency benefit along with lesser heat production, and reduction of size forces design engineers to choose silicon Carbide FETs and the worldover trend of supporting lessening carbon footprint is also a big motive. Mitsubishi who is a leader in high-power and very-high power semiconductor domain launched a more advanced silicon Carbide power semiconductor module for industrial equipment. It has already started shipping samples of its new NX-type full-SiC (silicon carbide) power semiconductor module for industrial equipment starting from June 14 2023. This new module reduces internal inductance and uses second-generation SiC chip for designing more efficient, smaller and lighter-weight industrial equipment.
Power semiconductor design engineers are continuously hunting for better silicon Carbide power modules to add all the unique advantages to their inverter products.
Mitsubishi Electric has started selling SiC power semiconductor modules in 2010. Mitsubishi says this new module featuring a low-loss SiC chip and optimized electrode structure, reduces internal inductance by 47% compared to its existing predecessor, enabling reduced power loss.
This new module is pin to pin compatible with Mitsubishi's other NX-type module.
Here below are the features and benefits of this new product as provided by Mitsubishi in its latest release:
Electrode structure optimized with laminated electrodes, etc. to achieve internal inductance of 9nH, 47% lower than that of the existing module.
Reduced internal inductance suppresses voltage surges to protect equipment, allowing fast switching while also lowering switching and power loss.
Low-loss second-generation SiC chip incorporates junction field effect transistor (JFET) doping technology 3 to reduce power loss approximately 72% compared to the existing module, contributing to more efficient equipment.
Reduced power loss helps to reduce heat generation, allowing use of smaller and lighter-weight coolers.
Find more details at:
https://www.mitsubishielectric.com/semiconductors/
