3D NAND process leveraging 3DX-DRAM offer 28 Gb with 230 layers

Finding new solutions to increase the memory density both in flash memory and DRAM is becoming highly challenging. NAND flash could go three-dimensional to achieve high-density. However in today's manufactuing technology 3D multilayer DRAM fabrication can not be made like how 3D NAND flash fabricated. A new concept in DRAM cell fabrication enable higher density in monolithic DRAM chip using NAND like 3D structure. A company named NEO Semiconductor announced a new three-dimensional 3D X-DRAM. It is a 3D NAND-like DRAM cell array where it provides high densities (up to 8 times higher than the competitors) compared to present DRAM. NEO own 10s of patents on this technology. 3D X-DRAM to use floating body cell technology, where it deviates from using capacitor, a must in present DRAM cells. The structure of the cell is similar to the cell of 3-D NAND flash memory. Due to this it is possible to achieve high density of 128 Gb by using 230 layer structure. It stores electric charges on a floating body without capacitor. NEO claims 8X density and capacity improvements per decade with this technology. Pic above: 3D X-DRAM cell
Pic above: 2D Floating Body Cell