SiC MOSFET power modules in full bridge and T-type topology
STMicroelectronics is offering power modules made out of ST's second-generation Silicon Carbide (SiC) MOSFETs. ST is making these modules available in two popular configurations:
1. A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters.
2. And the other A2U12M12W2-F2 features three-level T-type topology to combine high conduction and switching efficiency with consistent output-voltage quality.
High current handling 1200V silicon-carbide (SiC) MOSFETs feature outstanding RDS(on) on of 13m? typical per die. Both full-bridge and T-type topologies designed to switch at high-power and high-efficiency with lesser heat generation.
The compact ACEPACK 2 package handle high power density by having efficient alumina substrate and direct bonded copper (DBC) die attachment. Assembling or installing of these devices to the board or to subsystem is made easy by having press fit pins as external connections. This particular feature makes them suitable for use in harsh-environment equipment such as electric vehicles (Evs) and power conversion for charging stations, energy storage, and solar energy. The package offers 2.5kVrms insulation and integrated with NTC temperature sensor to help in protection and diagnosis.
ST is already started producing these modules with unit price listed at $235.20 for both the A2F12M12W2-F1 four-pack configuration and the A2U12M12W2-F2 three-level T-type inverter.
More information is available at www.st.com/acepack-1-and-2.