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13.9 mm2 GaN FET deliver power density of 1472 W/in3

Date: 31/05/2022
Gallium Nitride (GaN) semiconductor material based discrete semiconductor device maker EPC has added a new GaN FET EPC2066 with on resistance of 0.8 milli ohms typical, and voltage rating of 40 V and a footprint of 13.9 mm2. EPC2066 is suggested for use in secondary side of high power density 40 V – 60 V to 12 V DC-DC converters for new generation AI server computers, to achieve power density and power conversion efficiency. This device can also be used in secondary side synchronous rectification to 12V in power supply and silver box data center servers, and for high density motor drive applications from 24V – 32V. The power density focused designs can achieve 27% reduction in on-resistance in the same area. EPC2066 can switch at 1 MHz in delivering a power of 1.2 KW in a small 22.9 mm x 58.4 mm x 10 mm size (power density 1472 W/in3). The peak power conversion efficiency achievable is 97.3% at 550W and the full load efficiency of 96.3% at 12 V, delivering 100 A output current.

“The EPC2066 is significantly smaller than any other FET in the market at this on resistance”, commented Alex Lidow, EPC’s co-founder and CEO. “This part is the perfect compliment to the recently released EPC2071 for LLC DC-DC for high power density computing applications.”

EPCs also providing reference designboard of rating 1.2 KW, 48 V input to 12 V output LLC converter featuring EPC2071 for the primary side full bridge and the EPC2066 on the secondary side.

The EPC2066 eGaN FET is priced at 1K u/reel at $3.75 each and the development board is priced at $780.00/each

Both the EPC2066 and EPC9174 demonstration board are available for immediate delivery from electronics component distributor Digi-Key at https://www.digikey.com/en/supplier-centers/epc