Opto Diode launched infrared emitter and also a detector

Optoelectronic sensor specialist Opto Diode has launched a new infrared light-emitting diode packaged in a highly heat dissipating robust TO-66 package. The new device OD-669 is made using the material gallium aluminum arsenide (GaAlAs) and can emit infrared in the wavelength of 880 nm at a half intensity beam angle typically of 120 degrees. Nine IR emission chips are connected in series and is packaged in a electrically-isolated case. These devices are suggested far covert aircraft lighting or covert anti-collision lighting in aviation applications. At a current of 300 mA, this device can produce output power in the range of 390 mW to 500 mW (typical). With a spectral bandwidth at 50% is 80 nm, this device forward voltage is in the range of 13.5 volts (typical) to 15 volts (maximum) and a reverse breakdown voltage of minimum 5 volts and 30 volts (typical). Equivalent Capacitance is 11 Pf and a rise time and fall time is typically 3 μsec. Thermal parameters include the storage and operating temperature ranges of -55 °C to 100 °C and the maximum junction temperature of 100 °C. You can find more data at: https://optodiode.com/pdf/OD669DS.pdf. A few weeks earlier to the above products announcement, Opto Diode has also announced the new BXT2S-68TE, a thermoelectrically-cooled (TEC), two-stage infrared (IR) detector for applications such as gas analysis, emissions moni...