SuperGaN 650 V FET with on-res of 15 milli-ohms for EV

Power-conversion efficiency is important factor when converting DC to DC of different voltages and to control the power output fed to motor in electric vehicles and battery chargers. Semiconductor switch designers are continuously improving switching losses all the way from Bipolar Junction Transistor (BJT) to Insulated Gate Bipolar Transistor ( (IGBT) MOSFET. And today they getting away from silicon to compound semiconductor materials. Gallium nitride and silicon carbide-based FETs are less power dissipating, low heat producing, and can operate at high frequencies. Pure silicon MOSFETs are being replaced by gallium nitride and silicon Carbide FETs in some of the efficiency and performance driven power electronics applications. Except for the cost advantage silicon MOSFETs are pushed behind for high-efficiency power conversion applications. Riding on this trend, GaN device maker Transphorm is sampling its first Gen V device under its proprietary SuperGaN brand. Targeting the electrical vehicle market, the new TP65H015G5WS features very low packaged on-resistance and delivers a 25% lower power loss over Silicon Carbide (SiC) in a standard TO-247-3 package. Transphorm claims its SuperGaN technology performs better than Silicon Carbide. Automotive supplier Marelli invested $4 million in Transphorm as a strategic partner and has committed to an additional $1 million e...