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1200V SiC JBS diodes from ST for wide range of power electronics applications

Date: 14/05/2017
STMicroelectronics announced the availability of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes especially for applications such as solar inverters, industrial motor drives, home appliances, and power adapters.

SiC enhance power efficiency of power-electronics systems by having lower forward voltage drop (VF). ST also suggest these devices for automotive equipment such as On-Board Battery Chargers (OBC) and charging stations for Plug-In Hybrid or Electric Vehicles (PHEV/EV).

Other areas of usages suggested includes telecom and server power supplies, high-power industrial Switched-Mode Power Supplies (SMPS) and motor drives, uninterruptible power supplies (UPS), and large solar inverters.

SiC based power electronics systems reduce operating temperature and extend application lifetime. ST says its manufacturing process allows to display lower spread on the datasheet-guaranteed VF thereby enabling OEMs to ensure superior reproducibility when building circuits in high volumes.

STís new 1200V SiC diode family covers current ratings from 2A to 40A, including automotive-qualified devices, in surface-mount DPAK HV (High-Voltage) and D≤PAK, or through-hole TO-220AC and TO-247LL (Long-Lead) packages. ST is the only supplier to offer 1200V SiC diodes in the D≤PAK package. Budgetary pricing starts at $2.50 for the 10A STPSC10H12D in TO-220AC, for orders of 1000 pieces.

For further information visit www.st.com/sic-diodes-1200v-news