200-mm GaN-on-Si wafers using std CMOS equipment achieved by X-FAB and Exagan

X-FAB Silicon Foundries and Exagan claimed to have demonstrated mass-production capability to produce high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. 200-mm GaN-on-silicon wafers using standard CMOS production facility enables cost/performance advantages that could not be achieved with smaller wafers. The new GaN-on-silicon devices built using substrates fabricated at Exagan’s 200- mm epi-manufacturing facility in Grenoble, France. These epi wafers meet the physical and electrical specifications to produce Exagan’s 650-volt G-FET devices and the tight requirements for compatibility with CMOS manufacturing lines. The challenges of layering GaN films on silicon substrates by using Exagan’s G-Stack technology by depositing a unique stack of GaN and strain-management layers that relieves the stress between GaN and silicon layers. The resulting devices have been shown to exhibit high breakdown voltage, low vertical leakage and high-temperature operation. “This is a major milestone in our company’s development as we accelerate product development and qualification,” said Frédéric Dupont, president and CEO of Exagan. “It demonstrates the combined strengths of our epi material, X-FAB’s wafer fab process and our device design capabilities. It also confirms the success of our vertically integr...