650 W GaN on SiC HEMT pulsed power transistor for L band avionic applications

RF semiconductor specialist M/A-COM unveiled a new HEMT pulsed power transistor for L band 960 to 1215 MHz avionics Applications. The 650 watts output power delivering gallium nitride on silicon carbide (GaN on SiC) technology based MAGX-000912-650L00/MAGX-000912-650L0S is a gold metalized, internally matched, depletion mode RF power transistor. MAGX-000912-650L0x is ruggedized version with mean time to failure (MTTF) of 600 years. MAGX is a popular GaN RF pulsed power transistors series from M/A COM covering wide range of microwave applications in aerospace and defence. MAGX-000912-650L0x offers a typical gain of 20 dB and 62% drain efficiency. M/A COM says "The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), which enables reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies." Flat gain versus frequency performance and a common-source configuration for broadband class AB operation features are also highlights of these RF transistors. The MAGX-000912-650L0x is optimized for civilian and military pulsed avionics amplifier applications in the 960 to 1215 MHz range, for Mode-S, TCAS, JTIDS, DME and TACAN operation. MAGX-000912-650L00 and MAGX-000912-650L0S is available in standard flange or earless flange packaging. “The transistor is a clear leader in hig...