Low-Profile optocouplers for IGBTs and Power MOSFETs
Toshiba announced a new series of low-profile, rail-to-rail output gate-drive photocouplers for directly driving low- to medium-power IGBTs and power MOSFETs: the TLP5751, TLP5752 and TLP5754.
The TLP5751 offers a peak output current of ±1.0A and can drive power MOSFETs and low-power IGBTs up to 20A. The ±2.5A TLP5752 and ±4.0A TLP5754 will drive power MOSFETs and IGBTs with current ratings to 80A and 100A, respectively. Operating temperature is from -40°C to 110°C, and target applications include home appliances, factory automation equipment and inverter designs that require high levels of isolation and stable operation across an extended temperature range.
All of the new photocouplers are housed in a low-profile SO6L package. This package is 54 percent smaller in terms of height than photocouplers that use a DIP8 package - and uses just 43 percent of the board mounting area. Despite their low height, the new photocouplers have a guaranteed creepage distance of 8mm and an isolation voltage of 5kV.
The TLP57xx devices offer rail-to-rail output, delivering stable operation and enhanced switching performance. Power supply voltage is from 15V to 30V and maximum supply current is 3.0mA.
The TLP5751, TLP5752 and TLP5754 are comprised of a GaAlAs infrared LED and integrated high-gain, high-speed photodetector, and feature an undervoltage lockout (UVLO) function. An internal Faraday shield ensures a guaranteed common-mode transient immunity of Â±35kV/Î¼s. Maximum propagation delay time is rated at 150ns, and maximum propagation delay skew at 80ns.
News Source: Toshiba