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GaN L-Band radar transistor handle 650 W with a typ 19.5 dB gain

Date: 05/08/2014
MAGX-001214-650L00 from M/A-COM is a gold-metalized pre-matched GaN on Silicon Carbide transistor designed to offer peak power of 650 W with a typical 19.5 dB of gain and 60% efficiency, a high value compared to others.

MAGX-001214-650L00 also features high breakdown voltage. Available in ceramic flange package making it suitable for rugged operation of radar applications.

"The MAGX-001214-650L00 is a clear leader in high pulsed power GaN technology with guaranteed 650 W of peak output power combined with excellent gain, efficiency and reliable performance," said Paul Beasly, Product Manager. "The device is an ideal candidate for customers looking to combine two power transistors and realize over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints."

Operating between the 1200 MHz - 1400 MHz Frequency range, the MAGX-001214-650L00 features mean time to failure (MTTF) of 5.3*106 hours.