20 V MOSFET in 2.4x2x 0.4mm CSP MICRO FOOT package
Vishay Intertechnology has said it has made available an industry's first -20 V MOSFET in a 2.4 mm by 2.0 mm by 0.4 mm CSP MICRO FOOT package size targeting mobile computing devices. Si8851EDB features low on-resistance of 8.0 milli ohms and 11.0 milli ohms at -4.5 V and -2.5 V gate drives, respectively.
The other technical features as explained by Vishay:
The Si8851EDB's p-channel Gen III technology, in combination with MICRO FOOT's packageless CSP technology and 30-pin design and layout, provides the lowest on-resistance possible for a given outline area. Compared to the closest competing 2 mm by 2 mm by 0.8 mm device, the Si8851EDB combines a 50 % thinner profile with almost half the on-resistance at a 4.5 V gate drive, providing 37 % lower on-resistance per package size. Offering similar on-resistance to 3.3 mm by 3.3 mm by 0.8 mm MOSFETs, the Si8851EDB provides a 56 % smaller outline and at least a 30 % lower on-resistance per package size.
With its slim 0.4 mm profile, the device released today is optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks. The Si8851EDB's low on-resistance allows designers to achieve lower voltage drops in their circuits — promoting more efficient use of power and longer battery run times — while its compact footprint saves valuable PCB space. High typical ESD protection to 6 kV helps protect handheld devices against static charges, while ensuring safe part handling during the manufacturing process. The MOSFET is halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
The Si8851EDB is the latest expansion to Vishay's MICRO FOOT family, which can be found at http://www.vishay.com/mosfets/micro-foot-package/.
Samples and production quantities of the Si8851EDB are available now, with lead times of 12 to 16 weeks for larger orders.