Discrete

FETs from CEL for satellite and wireless equipment

California Eastern Laboratories (CEL) has unveiled two Small Signal GaAs FET NE3516S02 and NE3513M04 for designing X to Ku band low noise block (LNB) downconverters for direct broadcast satellites and also for designing X to Ku band wireless communications. CEL says these GaAs FETs offer improved Associated Gain and Noise Figure performance over previous generation devices. Key Features: Typical performance at 12GHz with bias 2V / 10mA: NE3516S02: NF = 0.35dB, Ga = 14dB (typically used for 1st stage) NE3513M04: NF = 0.45dB, Ga = 13dB (typically used for 2nd stage) Both devices maintain impressive NF and Ga at the lower bias of 2V / 6mA, as follows: NE3516S02: NF = 0.35dB, Ga = 13.5dB NE3513M04: NF = 0.50dB, Ga = 12dB Pricing, Packaging and Availability Samples are available now at CEL. Pricing is as follows: NE3516S02: $0.72 @ 100K pcs NE3513M04: $0.52 @ 100K pcs CEL has also introduced the NE555 family of RF Discrete LD MOSFETs which were specifically designed to meet the demanding requirements of 2-Way Radios. The NE555 series are also great medium power transistors for Automatic Metering Infrastructure, RFID readers, and general short range wireless applications. Key Features: RF output power options of 9W, 7W, and 2W at frequencies up to 1GHz, with nominal 7.5V supply. High Power Added Efficiencies in the 52-60% range for 915MHz, and 63-73% range for 1...
You've read this far — sign in to keep reading

Sign in to keep reading.

Forgot password?
OR