Indium Phosphide-based transceiver chip for 100X faster mobile phones

Engineers at Fujitsu have developed 240 gigahertz bandwidth capable microwave receiver IC. The Indium Phosphide semiconductor-based receiver IC is a multistage amplifier with high sensitivity. It also features protection against amplifiers oscillator effect. The present 4G capable LTE supporting smart phones operate in the frequency bandwidth of 2 GHz. You can imagine the increase in data speed capability of smart phones if they are integrated with 240 GHz chips. High definition media files can be downloaded hundred times faster compared to the present-day smartphones. To increase the frequency bandwidth of RF receivers, engineers are basically using advanced a compound semiconductor material. Today's RF front end IC chips are built using Gallium Arsenide semiconductor material, they are not suitable for handling the millimeter wave RF signals. Indium Phosphide is a very good material for millimeter wave RFICs. This IC's sensitivity is increased approximately 10 times to support reception of large data volumes by smartphones or other mobile devices using a compact antenna. Fujitsu has presented this technology at a event called CSICS 2013, the Compound Semiconductor IC Symposium, held on October 13 in Monterey, California. When you design an IC chip for receiving millimeter wave signal, designer has to take care of the plenty of leakage possibilities. The leaked sign...