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Toshiba adds 10 A SiC schottky barrier diodes

Date: 19/09/2013
Toshiba has expanded its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products. These diodes are already under mass production with immediate shipment possible.

Toshiba suggests it's SiC Schottkey barrier diodes for applications such as power conditioners for photovoltaic power generation systems. They can also replace silicon diodes in switching power supplies, where the SiC schottkey barrier diodes are 50% more efficient.

SiC can work at higher stability compared to silicon diodes at high voltages and currents, they also produce less heat.
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