New improved process from STMicroelectronics for making RF devices

ST Microelectronics has achieved an improved process for making RF devices called Optimized RF Silicon-On-Insulator (SOI) process which reduces size of multi-band radios for 4G and other high-speed wireless connections. ST explains: In wireless devices, the RF front-end circuit is typically built using individual amplifiers, switches and tuners. As new high-speed standards such as 4G mobile and Wi-Fi (IEEE 802.11ac) use multiple frequency bands to increase data throughput, the latest equipment requires additional front-end circuitry. While current 3G phones use up to five frequency bands, the 3GPP 1 standards for next-generation 4G LTE support up to 40 bands. Conventional separate components dramatically increase overall size whereas ST’s new manufacturing process, known as H9SOI_FEM, allows production of complete integrated front-end modules. ST says this process is an evolution of the H9SOI Silicon-on-Insulator process; a groundbreaking technology introduced by ST in 2008 and subsequently used by customers to produce more than 400 million RF switches for mobile phones and Wi-Fi applications. Building on that experience, ST said it has optimized H9SOI for creating integrated front-end modules, resulting in today’s announcement of H9SOI_FEM offering the industry’s best figure of merit for antenna switch and antenna tuning devices with Ron x Coff at 207fs2 . ST has also in...