MOSFETs from NXP for PoE designs
NXP Semiconductors N.V. has launched a new family of NextPower Live MOSFETs designed specifically for Power over Ethernet (PoE) applications. The new MOSFETs PSMN040-100MSE and PSMN075-100MSE – provide twice the level of inrush current capability of competitive offerings, making them ideal for high-power PoE architectures (30W and above) such as PoE+, UPoE and LTPoE++, as per NXP.
“Power over Ethernet is a rapidly evolving technology that requires every component in the PoE ecosystem to keep up if it’s to be more widely adopted,” said Chris Boyce, MOSFET business manager, NXP Semiconductors. “New high-power standards require high-performance protection solutions. This new class of devices from NXP delivers twice the capability of existing PoE MOSFETs and we believe will play an important role in the ongoing adoption of high power PoE.”