8 MP, 1.12 um, BSI CMOS image sensor integrates color noise reduction circuit
Date: 08/02/2013
Toshiba Corporation is sampling a 8-megapixel, 1.12micrometer, back side illumination (BSI) CMOS image sensor integrating a color noise reduction (CNR) circuit.
The new 1.12 micrometer image sensor, "T4K35", integrates both BSI and CNR to achieve a signal to noise ratio (SNR) equal to Toshiba's existing 1.4 micrometer product. It supports chip and camera module miniaturization and will contribute to the achievement of slimmer smartphones and tablets.
Pixel miniaturization in today's 1.12 micrometer pixel image sensors has cut light sensitivity and SNR, resulting in poorer image quality. BSI technology alone improves sensitivity but still falls short of the required image quality. Leveraging its powers of innovation and technology expertise, Toshiba has developed a CMOS image sensor that integrates both BSI and CNR, directly addressing the key issues of low light sensitivity and SNR. The new CMOS image sensor provides an approximately 1.5 times higher SNR value[1] than a 1.12 micrometer pixel image sensor without CNR, allowing manufacturers to develop products that deliver high quality imagery, even in low light conditions.
Other key features include Integrated CNR circuit and Frame rate of 30fps.
Applications: Cameras for smartphones and tablets
Main specificationsPart number T4K35
Resolution 8-megapixels
Optical size 1/4 inch
Aspect size 4:3
Pixel size 1.12 micrometer
Frame rate (full) 30 fps
Mass production schedule July 2013
Follow this link for more on this product.
http://www.semicon.toshiba.co.jp/eng/product/sensor/selection/topic/1267832_2460.html
