Date: 24th Jun 2011
Cost optimized 1200V silicon carbide Schottky
diodes from Cree
Cree, Inc. has launched a new family of cost optimized
seven 1200V Z-Rec silicon carbide (SiC) Schottky diodes
available in different current ratings and sizes.
"In order to develop the next generation of power
electronics, design engineers are looking for the unique
performance advantages of SiC Schottky diodes - zero reverse
recovery losses, temperature-independent switching losses,
higher frequency operation - all with a lower EMI signature,"
said John Palmour, Cree co-founder and chief technology
officer, Power and RF. "This new family of diodes allows
a higher current density and increased avalanche capability
over previous generation SiC Schottky diodes with no penalty
in performance. Cree's recent innovations in device design
and commitment to continuous process improvement are allowing
us to offer significantly higher amperage ratings at lower
cost per amp."
Cree claims Z-Rec diodes feature zero reverse recovery,
resulting in up to a 50% reduction in switching losses versus
comparable silicon diodes. These thermally stable SiC diodes
when used with Cree's recently-introduced 1200V SiC power
MOSFETs, enable the implementation of all-SiC power electronic
circuits with the capability to operate at up to four times
higher switching frequencies when compared to conventional
silicon diodes and IGBTs, according to Cree.
These devices are suggested as ideal as boost diodes and
anti-parallel diodes in solar inverters and 3-phase motor
drive circuits, as well as in power factor correction (PFC)
boost circuits in power supplies and UPS equipment.
They can also be used in applications where engineers typically
parallel many devices to address higher power requirements.
Devices now released are rated for 2A[C4D02120x], 5A[C4D05120x],
10A[C4D10120x], 20A[C4D20120x] and 40A[C4D40120x]. Dependent
on amperage ratings, the parts are available in standard
or fully-isolated TO-220 and standard TO-247 packages. Check
with Cree for availability of devices in die form.
These new Z-Rec 1200V Schottky diodes are fully qualified
and released for production use. For samples and more information
about Cree's SiC power devices visit www.cree.com/power.
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