Date: 24th Jun 2011
9Gb DDR3 SDRAM memory device packaged
in a single PBGA
Microsemi Corporation has announced a 9Gb (gigabit) DDR3
SDRAM memory device packaged in a single plastic ball grid
array (PBGA) and offered as a compact x72 dual in-line memory
module (DIMM).
The solution enables designers to pack up to 4GB memory
densities into smaller, faster systems used in mission-critical
applications. These include secure communications, missile
systems, munitions and other applications that operate in
demanding environments and require extended-temperature
ranges.
"Microsemi's DDR3 SDRAM packaging further strengthens
our industry-leading offering of custom and standard high-reliability,
extended-temperature memory solutions," said Jack Bogdanski,
director of marketing for Microsemi. "We have more
than three decades of experience in packaging techniques
for military and aerospace applications. We will continue
to focus on providing our customers with high-performance,
high-reliability solutions that solve space and density
issues."
Key Features
Density - 1GByte, 9Gbits. Upgradeable to 4GBytes
Measures only 20.5 mm x 21.5 mm
Available in a 375 PBGA package
Offers 30 percent space savings and 21 percent reduced I/O
routing as compared to solutions with similar capabilities
built from discrete components
Supports data rates of 800, 1,066 and 1,333 megabits per
second (Mb/s)
Operates on a 1.5 volt power supply
Available in commercial and industrial temperature ranges
Microsemi's high-speed memories optimize performance by
using a four nanosecond (ns)-prefetch architecture with
an interface that allows two data words to be transmitted
per clock cycle. The devices can be ruggedized and processed
for tamper resistance, and are offered in densities up to
4GByte with 2x256Mx72 configurations. The company plans
to offer a low-profile option that will be footprint-compatible
with the current 375 PBGA package. All devices are subjected
to extensive environmental and temperature testing.
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