SK Hynix to complete buiding of new memory semiconductor fab M15X by 2025
The leading semiconductor memory chip manufacturer SK Hynix to start construction of its new semiconductor fab M15 extension in Cheongju, Chungcheongbuk-do, South Korea. The new plant will be built from October-2022 on 60,000 square meters of land. An investment of 15 trillion Won is pumped to this project over next five years.
SK Hynix announce this plan while the memory chip market is experiencing fall in demand and the instability of the supply chain. However SK Hynix sees investment made now will benefit the company when the market starts growing. This investment is made to prepare for the next market growth which is expected to come in 2025.
“Looking back on the past 10 years, SK hynix could grow into a global company as it boldly carried out investment during crisis,” said Vice Chairman and Co-Chief Executive Park Jung-ho. “As we look to prepare for the next 10 years now, I believe starting the M15X will be a first step to lay foundation for a solid future growth.”
SK Hynix also said it will decide construction plan of Next M17 fab after reviewing overall business environment in the semiconductor market.
SK hynix had registered a record revenue of 13.81 trillion won in the second quarter of 2022.
“Although DRAM product prices fell during the second quarter, revenues increased as NAND prices rose and overall sales volume increased,” the company said. “Continued rise of the US dollar and the addition of Solidigm’s sales also worked as positive factors for the quarterly revenue.”
SK Hynix alerts that memory demand to slowdown in the second half of 2022 due to lower shipment of computers and smartphones, which of the major consumers of semiconductor memory chips.
To share you on the advancement of technology it has achieved recently, SK Hynix has made world's first 238-layer 512Gb TLC 4D NAND developed in the month of July 2022, and company plans to produce volumes of this device in the first of 2023. The data transfer speeds of this chip is 2.4Gb per second, 50% upcompared to its previous generation.
Author: Srinivasa Reddy N