Sensitron employs EPC GaN switches in its half-bridge power modules
Sensitron in collaboration with EPC developed family of 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) with an integrated gate drive in ultra small packages that are 60% smaller than functionally equivalent silicon FETs. Sensitron designed these modules using EPC made 350 V, EPC2050 GaN FET. Sensitron announced two bridge modules with switching voltage and current specifications of 200V, 26A, and 350V and 20A.
The SPG025N035P1B from Sensitron is a high power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 KHz. Rated at 20A, the module can be used to control over 3 Kw. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.
The SPG025N035P1B module uses 350 V GaN FET with 80 milli ohms maximum RDS(on), 26 A peak current power in an extremely small chip-scale package that measures just 1.95 mm x 1.95 mm. EPC2050 offers low switching losses, and a high power density solution in extremely small size package.
“We are delighted to be working with EPC. By using the ultra-small EPC2050 GaN FET, we could design a 350 V half bridge module with higher efficiency and 1/3rd the size of alternative silicon solutions allowing us to capture very high-density applications”, commented Richard Locarni, Director of New Business Development, Sensitron.
Alex Lidow, EPC’s CEO added, “This application is a great example of the real benefits that GaN brings. We have worked closely with Sensitron to find the best eGaN FET to meet the design challenges that the power-density requirements of their module demands.”
Author: Srinivasa Reddy N