Japan-based semiconductor equipment vendor Tokyo Electron (TEL) and the MRAM memory technologyy expert Spin Transfer Technologies (STT) have agreed to collaborate on next-generation SRAM and DRAM-class ST-MRAM devices.
They are jointly putting effort to increase the speed, density, and endurance of MRAM memory devices. TEL's MRAM specific advanced physical vapour deposition (PVD) tool and STT's ST-MRAM technology are combined to quickly develop processes for the highest density and endurance devices. STT contributing its high-speed, high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, and TEL utilizing its industry-leading ST-MRAM deposition tool and knowledge of unique formation capabilities of magnetic films. Initially they will target embedded SRAM, and eventually stand-alone DRAM markets.
ST-MRAM is expected to be more compact less costly and also operates with less power for storing data and is nonvolatile, retaining data for long periods without power. The weak points of MRAM such as slow switching and endurance issues are now addressed by this joint collaboration so that MRAM matches in performance with SRAM.
STT and TEL will demonstrate solutions that are far denser than other ST-MRAM solutions while eliminating barriers to replacing SRAM. These sub-30nm Pmtj's, 40 to 50 percent smaller than other commercial solutions, should be attractive to advanced logic-ICs and a significant step toward making DRAM-class ST-MRAM devices, claimed in the release.
"Industries have outgrown the capabilities of SRAM and DRAM leaving the market open for the next generation of technology," said Tom Sparkman, CEO of STT. "Having TEL, the world?s leading ST-MRAM deposition equipment supplier, as a partner speeds up the development of STT's technology for replacing SRAM and DRAM. We believe the adoption of ST-MRAM will materially exceed current expectations, and we are excited to work with TEL to revolutionize the ST-MRAM market by achieving the speed, density and endurance the industry needs."
"Together with STT's team of experts, device fabrication know-how and its on-site development fab, we expect to accelerate the development of high-performance, high-density MRAM devices for the SRAM market and ultimately the DRAM replacement market." said Yoichi Ishikawa, Vice President, PVD Dept. of TEL's Thin Film Formation Business Unit. "We thank STT for recognizing the performance of and for choosing our advanced MRAM deposition system for this purpose."
ST-MRAM technologies combine patented magnetics technologies, circuits and memory architectures.