Infineon further strengthens it's capability in widebandgap/compound power and RF semiconductor market by agreeing to acquire Wolfspeed, the power and RF division of Cree by paying around US$ 850 million. The deal also includes the related SiC wafer substrate business for power and RF power. Infineon had acquired discrete power semiconductor company International Rectifier in 2014.
Dr. Reinhard Ploss, CEO of Infineon Technologies AG, says "With Wolfspeed we will become number one in SiC-based power semiconductors. We also want to become number one in RF power”
Chuck Swoboda, Cree Chairman and CEO, says “we believe that Wolfspeed will now be able to more aggressively commercialize its unique silicon carbide and gallium nitride technology as part of Infineon.”
North Carolina, US based Wolfspeed offers SiC-based power and GaN-on-SiC-based RF power solutions. This also includes the related core competencies in wafer substrate manufacturing for SiC, and for SiC with a monocrystalline GaN layer for RF power applications. Wolfspeed with 550 skilled staff owns approximately 2K patents and patent applications.